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Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F12%3A%230000036%21RIV13-TA0-26821532
rdf:type
skos:Concept n10:Vysledek
dcterms:description
Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm. Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm.
dcterms:title
DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm
skos:prefLabel
DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm
skos:notation
RIV/26821532:_____/12:#0000036!RIV13-TA0-26821532
n10:predkladatel
n17:ico%3A26821532
n3:aktivita
n12:P
n3:aktivity
P(TA01010078)
n3:dodaniDat
n15:2013
n3:domaciTvurceVysledku
n7:6724264 n7:4243757 n7:1388428 n7:1116029
n3:druhVysledku
n20:G%2FB
n3:duvernostUdaju
n16:C
n3:ekonomickeParametry
Wafer costs < 60 USD.
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
130004
n3:idVysledku
RIV/26821532:_____/12:#0000036
n3:interniIdentifikace
V001/TA01010078-W750S01/S00
n3:jazykVysledku
n8:eng
n3:kategorie
n11:A
n3:klicovaSlova
SOI; Silicon-On-Insulator; BGSOI; Polished wafer
n3:klicoveSlovo
n5:Polished%20wafer n5:SOI n5:Silicon-On-Insulator n5:BGSOI
n3:kontrolniKodProRIV
[46B4B546DF38]
n3:licencniPoplatek
n13:A
n3:obor
n6:JJ
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n19:TA01010078
n3:rokUplatneniVysledku
n15:2012
n3:technickeParametry
Diameter 150 mm, substrate CZSi:B 3-13 ohmcm, (100), THK 625 or 525 um, BOX 620 nm, defect-free DL THK 3 +/- 0.3 um.
n3:tvurceVysledku
Pospíšil, Miloš Lorenc, Michal Šik, Jan Válek, Lukáš
n3:vlastnik
n4:vlastnikVysledku
n3:vyuzitiJinymSubjektem
n18:A