. . . . "Kosteln\u00EDk, Petr" . "RIV/26821532:_____/12:#0000035!RIV13-TA0-26821532" . "V\u00E1lek, Luk\u00E1\u0161" . . . "P(TA01010078)" . . "Prototype (sample) of Bond and Etch Back Silicon-On-Insulator (BESOI) wafer. BESOI wafer diameter 150 mm, CZSi substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 625 um, BOX (buried oxide layer) 620 nm, epitaxial device layer thickness 1.0 um, device layer thickness variability +/- 0.2 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm."@en . . . . . "V001/TA01010078-W660S01 SOI /1\u00B5m" . "Posp\u00ED\u0161il, Milo\u0161" . . "5"^^ . . "DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER" . . "5"^^ . . . "[F3F8824A8C46]" . "DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER"@en . "DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER" . "Lorenc, Michal" . "DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER"@en . "\u0160ik, Jan" . "Wafer Costs < 100 USD" . . "Diameter 150 mm, CZSi:P <0.002 ohmcm (100), THK 625 um, BOX 620 nm, EPI DL THK 1.0 um +/- 0.2 um. ." . . . . . . . "SOI; Silicon-On-Insulator; BESOI; polished wafer"@en . . . "RIV/26821532:_____/12:#0000035" . "Prototype (sample) of Bond and Etch Back Silicon-On-Insulator (BESOI) wafer. BESOI wafer diameter 150 mm, CZSi substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 625 um, BOX (buried oxide layer) 620 nm, epitaxial device layer thickness 1.0 um, device layer thickness variability +/- 0.2 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm." . "130003" .