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Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F12%3A%230000035%21RIV13-TA0-26821532
rdf:type
skos:Concept n13:Vysledek
dcterms:description
Prototype (sample) of Bond and Etch Back Silicon-On-Insulator (BESOI) wafer. BESOI wafer diameter 150 mm, CZSi substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 625 um, BOX (buried oxide layer) 620 nm, epitaxial device layer thickness 1.0 um, device layer thickness variability +/- 0.2 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm. Prototype (sample) of Bond and Etch Back Silicon-On-Insulator (BESOI) wafer. BESOI wafer diameter 150 mm, CZSi substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 625 um, BOX (buried oxide layer) 620 nm, epitaxial device layer thickness 1.0 um, device layer thickness variability +/- 0.2 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm.
dcterms:title
DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER
skos:prefLabel
DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER
skos:notation
RIV/26821532:_____/12:#0000035!RIV13-TA0-26821532
n13:predkladatel
n14:ico%3A26821532
n3:aktivita
n6:P
n3:aktivity
P(TA01010078)
n3:dodaniDat
n18:2013
n3:domaciTvurceVysledku
n4:6724264 n4:8906793 n4:4243757 n4:1388428 n4:1116029
n3:druhVysledku
n7:G%2FB
n3:duvernostUdaju
n19:C
n3:ekonomickeParametry
Wafer Costs < 100 USD
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
130003
n3:idVysledku
RIV/26821532:_____/12:#0000035
n3:interniIdentifikace
V001/TA01010078-W660S01 SOI /1µm
n3:jazykVysledku
n15:eng
n3:kategorie
n17:A
n3:klicovaSlova
SOI; Silicon-On-Insulator; BESOI; polished wafer
n3:klicoveSlovo
n11:BESOI n11:polished%20wafer n11:Silicon-On-Insulator n11:SOI
n3:kontrolniKodProRIV
[F3F8824A8C46]
n3:licencniPoplatek
n16:A
n3:obor
n20:JJ
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n12:TA01010078
n3:rokUplatneniVysledku
n18:2012
n3:technickeParametry
Diameter 150 mm, CZSi:P <0.002 ohmcm (100), THK 625 um, BOX 620 nm, EPI DL THK 1.0 um +/- 0.2 um. .
n3:tvurceVysledku
Kostelník, Petr Válek, Lukáš Pospíšil, Miloš Lorenc, Michal Šik, Jan
n3:vlastnik
n9:vlastnikVysledku
n3:vyuzitiJinymSubjektem
n5:A