"I3T/SOI<110>"@en . . . . "ON SEMICONDUCTOR, Ro\u017Enov pod Radho\u0161t\u011Bm - ONCR/RDCE/BUDOVA V12" . . . . "Posp\u00ED\u0161il, Milo\u0161" . . . . "RIV/26821532:_____/11:#0000030!RIV12-TA0-26821532" . . "I3T/SOI<110>" . "Jednotkov\u00E1 cena SOI desky pod 60 USD s potenci\u00E1lem zv\u00FD\u0161en\u00ED v\u00FDroby, exportu i zisku (pl\u00E1novan\u00E9 uplatn\u011Bn\u00ED v\u00FDsledku od roku 2012-13)." . . . "206023" . "I3T/SOI<110>" . . . . . "RIV/26821532:_____/11:#0000030" . "Prototype (sample) of advanced Silicon-On-Insulator (SOI) structure based on <110> substrate. SOI wafer diameter 150 mm, thickness 525 or 625 um, crystallographic orientation <110>, BOX 620 nm, device layer thickness 3 um, device layer thickness variability +/- 0.5 um." . "I3T/SOI<110>"@en . . "I3T/SOI<110>" . . "SOI: Substr\u00E1t: pr\u016Fm\u011Br 150mm <110> Si:B 525 or 625 um, BOX 620 +/- 10 nm, aktivn\u00ED vrstva Si:B (100) 3 um +/- 0.5um." . "Lorenc, Michal" . . "2"^^ . . "[1DEDCD8EA749]" . "Prototype (sample) of advanced Silicon-On-Insulator (SOI) structure based on <110> substrate. SOI wafer diameter 150 mm, thickness 525 or 625 um, crystallographic orientation <110>, BOX 620 nm, device layer thickness 3 um, device layer thickness variability +/- 0.5 um."@en . "2"^^ . . . "SOI; Silicon; Silicon-On-Insulator; Wafer; Bonding"@en . "P(TA01010078)" . .