. "3"^^ . . . "ON SEMICONDUCTOR, Ro\u017Enov pod Radho\u0161t\u011Bm - ONCR/RDCE/BUDOVA V12" . . . "3"^^ . "P(TA01010078)" . "[E600B9759ACF]" . . . . . . "HFVR/SOI" . "SOI: Substr\u00E1t: pr\u016Fm\u011Br 150mm (100) Si:P (<2 mohmcm) 525 um, BOX 620 +/- 10 nm, aktivn\u00ED vrstva Si:B (100) 1.5 um +/- 0.3um" . "HFVR/SOI" . "Prototype (sample) \u2013 V001/TA01010078 - of advanced Silicon-On-Insulator (SOI) structure for High-Frequency-Voltage-Regulators. SOI wafer diameter 150 mm, substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 525 um, BOX 620 nm, device layer thickness 1.5 um, device layer thickness variability +/- 0.3 um." . . . "HFVR/SOI"@en . "SOI; Silicon; Wafer; Silicon-On-Insulator; Bonding"@en . . . "HFVR/SOI"@en . "Prototype (sample) \u2013 V001/TA01010078 - of advanced Silicon-On-Insulator (SOI) structure for High-Frequency-Voltage-Regulators. SOI wafer diameter 150 mm, substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 525 um, BOX 620 nm, device layer thickness 1.5 um, device layer thickness variability +/- 0.3 um."@en . . "RIV/26821532:_____/11:#0000029!RIV12-TA0-26821532" . "Kosteln\u00EDk, Petr" . "Lorenc, Michal" . "201982" . . "RIV/26821532:_____/11:#0000029" . . "V001/TA01010078 (W660S00)" . . . . "Jednotkov\u00E1 cena SOI desky pod 100 USD s potenci\u00E1lem zv\u00FD\u0161en\u00ED v\u00FDroby, exportu i zisku (pl\u00E1novan\u00E9 uplatn\u011Bn\u00ED v\u00FDsledku od roku 2013)." . "Posp\u00ED\u0161il, Milo\u0161" . . . . .