. . . "\u0160ik, Jan" . . "1012-0394" . . "RIV/26821532:_____/11:#0000028!RIV12-TA0-26821532" . "RIV/26821532:_____/11:#0000028" . "We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination for demonstration of gettering properties." . . "Chemical Vapour Deposition (CVD); Gettering; Multilayer Structure; Polycrystalline Silicon"@en . "Polycrystalline silicon layers with enhanced thermal stability"@en . . . "7"^^ . . "Solid State Phenomena" . "Polycrystalline silicon layers with enhanced thermal stability" . "Lys\u00E1\u010Dek, David" . "178 - 179" . . "[CD392E486099]" . "2"^^ . "3"^^ . "Polycrystalline silicon layers with enhanced thermal stability"@en . "http://www.scientific.net/SSP.178-179.385" . . . . . "10.4028/www.scientific.net/SSP.178-179.385" . "We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination for demonstration of gettering properties."@en . "CH - \u0160v\u00FDcarsk\u00E1 konfederace" . "2011" . "Polycrystalline silicon layers with enhanced thermal stability" . . . "221200" . . . "P(ED1.1.00/02.0068), P(TA01010078)" . .