This HTML5 document contains 43 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n13http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n12http://linked.opendata.cz/resource/domain/vavai/projekt/
n16http://linked.opendata.cz/resource/domain/vavai/subjekt/
n15http://linked.opendata.cz/ontology/domain/vavai/
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F26821532%3A_____%2F11%3A%230000028%21RIV12-TA0-26821532/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
rdfshttp://www.w3.org/2000/01/rdf-schema#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n19http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n6http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n20http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n11http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F11%3A%230000028%21RIV12-TA0-26821532
rdf:type
skos:Concept n15:Vysledek
rdfs:seeAlso
http://www.scientific.net/SSP.178-179.385
dcterms:description
We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination for demonstration of gettering properties. We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination for demonstration of gettering properties.
dcterms:title
Polycrystalline silicon layers with enhanced thermal stability Polycrystalline silicon layers with enhanced thermal stability
skos:prefLabel
Polycrystalline silicon layers with enhanced thermal stability Polycrystalline silicon layers with enhanced thermal stability
skos:notation
RIV/26821532:_____/11:#0000028!RIV12-TA0-26821532
n15:predkladatel
n16:ico%3A26821532
n3:aktivita
n20:P
n3:aktivity
P(ED1.1.00/02.0068), P(TA01010078)
n3:cisloPeriodika
2011
n3:dodaniDat
n11:2012
n3:domaciTvurceVysledku
n13:6724264 n13:6487041
n3:druhVysledku
n4:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
221200
n3:idVysledku
RIV/26821532:_____/11:#0000028
n3:jazykVysledku
n5:eng
n3:klicovaSlova
Chemical Vapour Deposition (CVD); Gettering; Multilayer Structure; Polycrystalline Silicon
n3:klicoveSlovo
n6:Multilayer%20Structure n6:Polycrystalline%20Silicon n6:Chemical%20Vapour%20Deposition%20%28CVD%29 n6:Gettering
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[CD392E486099]
n3:nazevZdroje
Solid State Phenomena
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n12:ED1.1.00%2F02.0068 n12:TA01010078
n3:rokUplatneniVysledku
n11:2011
n3:svazekPeriodika
178 - 179
n3:tvurceVysledku
Šik, Jan Lysáček, David
s:issn
1012-0394
s:numberOfPages
7
n19:doi
10.4028/www.scientific.net/SSP.178-179.385