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Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F13%3A00065531%21RIV14-TA0-14740___
rdf:type
n14:Vysledek skos:Concept
dcterms:description
Pseudomorph epitaxial films of Si1-xGex:B were grown on undoped (100) Si for x<0.026 and the B concentration of 1.3E20 cm-3. The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized 11B and 10B vibrations have been observed. The spectral shift of E1 electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra. Pseudomorph epitaxial films of Si1-xGex:B were grown on undoped (100) Si for x<0.026 and the B concentration of 1.3E20 cm-3. The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized 11B and 10B vibrations have been observed. The spectral shift of E1 electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.
dcterms:title
Lattice constants and optical response of pseudomorph Si-rich SiGe:B Lattice constants and optical response of pseudomorph Si-rich SiGe:B
skos:prefLabel
Lattice constants and optical response of pseudomorph Si-rich SiGe:B Lattice constants and optical response of pseudomorph Si-rich SiGe:B
skos:notation
RIV/00216224:14740/13:00065531!RIV14-TA0-14740___
n14:predkladatel
n15:orjk%3A14740
n3:aktivita
n13:S n13:P
n3:aktivity
P(TA01010078), S
n3:cisloPeriodika
20
n3:dodaniDat
n8:2014
n3:domaciTvurceVysledku
n10:6724264 n10:7105711 n10:1834282
n3:druhVysledku
n6:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
84417
n3:idVysledku
RIV/00216224:14740/13:00065531
n3:jazykVysledku
n7:eng
n3:klicovaSlova
silicon; SiGe alloys; heavy doping
n3:klicoveSlovo
n5:heavy%20doping n5:silicon n5:SiGe%20alloys
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[B30FFC5A0B37]
n3:nazevZdroje
Applied Physics Letters
n3:obor
n20:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:projekt
n18:TA01010078
n3:rokUplatneniVysledku
n8:2013
n3:svazekPeriodika
103
n3:tvurceVysledku
Kostelník, P. Šik, Jan Caha, Ondřej Kim, Y.D. Humlíček, Josef
n3:wos
000327818700048
s:issn
0003-6951
s:numberOfPages
4
n19:doi
10.1063/1.4830367
n4:organizacniJednotka
14740