"0"^^ . . . "2011-03-18+01:00"^^ . . . . . . . . "1"^^ . . . "The project proposal focuses on the study of the influence of rare-earth elements (RE) on the bulk crystals of InP prepared by the Czochralski method and on epitaxial layers prepared by LPE in order to getter unintentional impurities. Diminished concentrations of unintentional impurities in bulk crystals allow to lower concentrations of transition metals (TM) which are necessary to reach the SI state. Besides commonly used Fe, we will prepare high-quality SI material by alternative TM (Ti, Cr) doping, and we will investigate the thermal stability and redistribution of the TM and RE dopants in the substrate and adjacent p-type layer. To improve the metal/InP interface, the electrophoretic deposition of nanosized metal particles will be employed. Prepared structures will be characterized by electrical, optical, and microscopic techniques: Hall-effect measurements, DLTS, AS, photoluminescence, SEM, AFM, and SIMS."@en . " rare-earth elements" . "0"^^ . "2011-12-31+01:00"^^ . . "InP; single crystal growth; liquid phase epitaxy; rare-earth elements; thermal annealing; interface metal/InP; radiation detectors."@en . "5"^^ . " liquid phase epitaxy" . . "\u00DAloha p\u0159echodov\u00FDch kov\u016F a prvk\u016F vz\u00E1cn\u00FDch zemin v p\u0159\u00EDprav\u011B materi\u00E1l\u016F na b\u00E1zi InP pro detektory z\u00E1\u0159en\u00ED." . "2009-01-01+01:00"^^ . "5"^^ . "http://www.isvav.cz/projectDetail.do?rowId=KJB200670901"^^ . " thermal annealing" . "Byl zkoum\u00E1n vliv vz\u00E1cn\u00FDch zemin na p\u0159\u00EDpravu semiizola\u010Dn\u00EDch objemov\u00FDch krystal\u016F InP a epitaxn\u00EDch vrstev p a n typu vodivosti a jejich vyu\u017Eit\u00ED p\u0159i realizaci detektor\u016F z\u00E1\u0159en\u00ED pracuj\u00EDc\u00EDch p\u0159i pokojov\u00E9 teplot\u011B."@cs . " single crystal growth" . "Role of transition metals and rare-earth elements in preparation of InP-based materials for radiation detectors."@en . "2012-05-25+02:00"^^ . . . . "InP" . "Investigation of the influence of rare-earth elements on the preparation of semiinsulating bulk crystals of InP and epitaxial layers of n and p type conductivity and their application in radiation detectors at room temperature was performed."@en . . " interface metal/InP" . "KJB200670901" . . "Navrhovan\u00FD projekt se zam\u011B\u0159\u00ED na studium vlivu prvk\u016F vz\u00E1cn\u00FDch zemin (RE) na objemov\u00E9 krystaly InP p\u0159ipraven\u00E9 metodou Czochralsk\u00E9ho a epitaxn\u00ED vrstvy p\u0159ipraven\u00E9 metodou LPE za \u00FA\u010Delem getrace ne\u017E\u00E1douc\u00EDch p\u0159\u00EDm\u011Bs\u00ED. Sn\u00ED\u017Een\u00E9 koncentrace ne\u017E\u00E1douc\u00EDch p\u0159\u00EDm\u011Bs\u00ED v objemov\u00FDch krystalech umo\u017En\u00ED sn\u00ED\u017Eit koncentrace p\u0159echodov\u00FDch kov\u016F (TM) pot\u0159ebn\u00E9 pro dosa\u017Een\u00ED semiizola\u010Dn\u00EDho (SI) stavu. Krom\u011B standardn\u011B pou\u017E\u00EDvan\u00E9ho Fe budeme pou\u017E\u00EDvat alternativn\u00ED TM (Ti, Cr) pro p\u0159\u00EDpravu kvalitn\u00EDho SI materi\u00E1lu a studium teplotn\u00ED stability a redistribuce TM a RE v SI InP substr\u00E1tu a p\u0159ilehl\u00E9 epitaxn\u00ED vrstv\u011B vodivostn\u00EDho typu p. Pro zdokonalen\u00ED rozhran\u00ED kov/InP bude pou\u017Eita metoda elektroforetick\u00E9ho nan\u00E1\u0161en\u00ED kovov\u00FDch nano\u010D\u00E1stic. Struktury budou charakterizov\u00E1ny elektrick\u00FDmi, optick\u00FDmi a mikroskopick\u00FDmi metodami (Hallovo m\u011B\u0159en\u00ED, DLTS, AS, fotoluminiscence, SEM, AFM, SIMS) a testov\u00E1ny pro pou\u017Eit\u00ED k detekci RTG z\u00E1\u0159en\u00ED." . . .