. . " metal organic vapour phase epitaxy" . "Byly p\u0159ipraveny kvantov\u00E9 j\u00E1my a te\u010Dky z polovodi\u010D\u016F AIIIBV a z\u00EDsk\u00E1ny z\u00E1sadn\u00ED poznatky o r\u016Fstu ultratenk\u00FDch vrstev pomoc\u00ED MOVPE. Byly m\u011B\u0159eny a modelov\u00E1ny mechanismy z\u00E1\u0159iv\u00E9 rekombinace v extr\u00E9mn\u011B napnut\u00FDch InAs/GaAs vrstv\u00E1ch a jejich vliv na \u010Dinnost laser\u016F."@cs . . "0"^^ . " electroluminiscence" . "2"^^ . "http://www.isvav.cz/projectDetail.do?rowId=IAA1010318"^^ . "2007-09-26+02:00"^^ . "InAs/GaAs lasers" . . . . "1"^^ . . . . "InAs/GaAs lasers; metal organic vapour phase epitaxy; radiative recombination; subnanometer structures; electroluminiscence; photoluminiscence; photoconductivity"@en . " radiative recombination" . "Mechanismus z\u00E1\u0159iv\u00E9 rekombinace v subnanometrov\u00FDch InAs/GaAs laserov\u00FDch struktur\u00E1ch" . . "The proposers have been preparing and studyingsemiconductor laser structures with one or more thin InAs layers (several monoatomic layer thick) and only several nanometers apart for several years already. The shift of the position of the El, Pl maxima and that of the absorption edge depend on the thickness, number and separation of these InAs layers and has been found to be in the range of hundreds of MeV. The present theories predict shifts in the range of tens of MeV. New laser structures will be proposed and prepared by MOVPE and studied by EL, PL, and in plane photoconduction spectroscopy. These results will be used for verification of the theoretical models for simulation of the radiative recombination process. The aim of the project is to propose a model, capable of explaining the experimentaly measured shifts of the emission and absorption energies with the change of configuration of the layer structure and use these for the process of optimisation of laser performance."@en . . . . " subnanometer structures" . "25"^^ . "Radiative recombination machanism of subnanometric InAs/GaAs laser structures"@en . "AIIIBV quantum well and dot structures were prepared and basic knowledge of MOVPE ultrathin layer growth was obtained. Radiative recombination mechanisms and laser emission from highly strained InAs/GaAs layers were measured and modelled."@en . "25"^^ . . . . . . . . "Navrhovatel\u00E9 ji\u017E n\u011Bkolik let p\u0159ipravuj\u00ED a studuj\u00ED polovodi\u010Dov\u00E9 laserov\u00E9 struktury s jednou \u010Di v\u00EDce InAs vrstvami o tlou\u0161\u0165ce n\u011Bkolika atomov\u00FDch rovin a vzd\u00E1len\u00FDmi od sebe jednotky nanometr\u016F. Posun poloh maxim El, PL a absorp\u010Dn\u00ED hrany struktur se li\u0161\u00ED v z\u00E1vislosti na tlou\u0161\u0165ce, po\u010Dtu a vzd\u00E1lenosti InAs vrstev a je v \u0159\u00E1du stovek MeV. St\u00E1vaj\u00EDc\u00ED teorie a modely umo\u017E\u0148uj\u00ED vysv\u011Btlit tento posuv, v z\u00E1vislosti na v\u00FD\u0161e uveden\u00FDch parametrech, pouze v \u0159\u00E1du des\u00EDtek meV. Na z\u00E1klad\u011B teoretick\u00FDch p\u0159edstav a modelov\u00E1n\u00ED budou navr\u017Eeny s\u00E9rie laserov\u00FDch struktur, kter\u00E9 budou p\u0159ipraveny metodou MOVPE a charakterizov\u00E1ny pomoc\u00ED EL, PL a later\u00E1ln\u00ED fotovodivostn\u00ED spektroskopie. Z\u00EDskan\u00E1 data budou vyu\u017Eita pro up\u0159esn\u011Bn\u00ED teoretick\u00FDch p\u0159edstav, vytvo\u0159en\u00ED adekv\u00E1tn\u00EDch model\u016F a simulaci procesu z\u00E1\u0159iv\u00E9 rekombinace. C\u00EDlem projektu je vypracovat model, p\u0159isp\u011Bt k teoretick\u00E9mu vysv\u011Btlen\u00ED mechanismu posuvu emisn\u00EDch energi\u00ED v z\u00E1vislosti na parametrech struktury a vyu\u017E\u00EDt z\u00EDskan\u00E9 informace p\u0159i optimalizaci konstrukce laser\u016F." . . "IAA1010318" . " photoluminiscence" .