. "1748-0221" . . "6"^^ . "Simulation of a silicon neutron detector coated with TiB2 absorber"@en . "RIV/68407700:21670/12:00191447" . . . "167985" . "Journal of Instrumentation" . "http://iopscience.iop.org/1748-0221/7/01/C01096" . "3"^^ . "Petersson, Carl Sture" . . "Posp\u00ED\u0161il, Stanislav" . "10.1088/1748-0221/7/01/C01096" . "Simulation of a silicon neutron detector coated with TiB2 absorber"@en . "Krapohl, D." . "IT - Italsk\u00E1 republika" . . . "Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process." . "Slav\u00ED\u010Dek, Tom\u00E1\u0161" . . "[2B3ACF82AD52]" . . "P(LA08015)" . "000303806200096" . "RIV/68407700:21670/12:00191447!RIV15-MSM-21670___" . . . "2012" . "21670" . . "Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process."@en . "7"^^ . . . "7" . . . "Petersson, Carl Sture" . "Simulation of a silicon neutron detector coated with TiB2 absorber" . . "Simulation of a silicon neutron detector coated with TiB2 absorber" . "Detector modelling and simulations; Solid state detectors; Neutron detectors (cold, thermal, fast neutrons)"@en . .