. "4"^^ . "Mala Lucivna" . . "5"^^ . "292114" . . . "For preparation of GaAs material with a high proton number are associated disadvantages such as considerable inhomogeneity of resistivity, complicated measuring baseline parameters of the material, relatively labor-intensive processing technology, the availability of these complex materials in the form of single crystals and in some cases only exist in the form of epitaxial layers." . "P(LA08015), Z(MSM6840770029)" . . "Technology of GaAs detectors production" . "Technology of GaAs detectors production" . . "Bratislava" . "RIV/68407700:21670/10:00168638!RIV11-MSM-21670___" . . . "Dammer, Ji\u0159\u00ED" . "Slovensk\u00E1 technick\u00E1 univerzita v Bratislave" . "Kohout, Zden\u011Bk" . "For preparation of GaAs material with a high proton number are associated disadvantages such as considerable inhomogeneity of resistivity, complicated measuring baseline parameters of the material, relatively labor-intensive processing technology, the availability of these complex materials in the form of single crystals and in some cases only exist in the form of epitaxial layers."@en . . . "978-80-227-3307-6" . "Sopko, V\u00EDt" . "Technology of GaAs detectors production"@en . . . . . "RIV/68407700:21670/10:00168638" . . "2"^^ . "2010-06-16+02:00"^^ . . "Technology of GaAs detectors production"@en . "Sopko, Bruno" . "APCOM 2010" . . . "21670" . "GaAs; detector; TEES"@en . "Chren, Dominik" . . "[875AC4566963]" .