"309238" . "21670" . "607" . "Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment" . "10.1016/j.nima.2009.03.124" . "semiconductor detectors; radiation damage"@en . "5"^^ . . "Sagatova, A." . . "0168-9002" . "Dubecky, F." . "NL - Nizozemsko" . "Necas, V." . "Linhart, Vladim\u00EDr" . "1"^^ . "Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons"@en . "Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons" . . "Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutron imaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the results a significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material." . . . . "Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons"@en . . . "Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons" . . "Ladziansky, M." . . "000268987900040" . "http://dx.doi.org/10.1016/j.nima.2009.03.124" . "RIV/68407700:21670/09:00165971!RIV12-MSM-21670___" . "[5557D08F5011]" . . "RIV/68407700:21670/09:00165971" . "3"^^ . . "P(LC06041)" . . "2009" . . "Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutron imaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the results a significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material."@en .