"7"^^ . "Modified Hecht Model qualifying Radiation Damage in Standard and Oxygenated Silicon Detectors from 10MeV Protons"@en . . . "Leroy, C." . . "21670" . "Linhart, Vladim\u00EDr" . . "10MeV protons irradiation; Charge collection efficiency; Hecht model; Radiation damage; Silicon detectors"@en . "Hecht\u016Fv model popisuje \u00FA\u010Dinnost sb\u011Bru n\u00E1boje v polovodi\u010Dov\u00FDch detektorech pomoc\u00ED st\u0159edn\u00ED voln\u00E9 dr\u00E1hy nosi\u010D\u016F n\u00E1boje. Zat\u00EDmco tento model odpov\u00EDd\u00E1 nam\u011B\u0159en\u00FDm dat\u016Fm v p\u0159\u00EDpad\u011B radia\u010Dn\u011B nepo\u0161kozen\u00FDch detektor\u016F, jeho modifikace jsou nezbytn\u00E9 pro zahrnut\u00ED struktur\u00E1ln\u00EDch zm\u011Bn v detektorech indukovan\u00FDch jejich expozic\u00ED v siln\u00E9m toku \u010D\u00E1stic. Modifikovan\u00FD model je prezentov\u00E1n. St\u0159edn\u00ED voln\u00E1 dr\u00E1ha v tomto modelu z\u00E1vis\u00ED na tvaru elektrick\u00E9ho pole a na dob\u00E1ch \u017Eivota nosu\u010D\u016F n\u00E1boje. Doby \u017Eivota byly m\u011B\u0159eny experiment\u00E1ln\u011B z iluminace p\u0159edn\u00EDch a zadn\u00EDch st\u011Bn detektor\u016F jak pulzn\u00EDm laserem o vlnov\u00E9 d\u00E9lce 660 nm tak \u010D\u00E1sticemi alfa emitovan\u00FDmi radionuklidem 241Am. Tento modifikovan\u00FD Hecht\u016Fv model byl \u00FAsp\u011B\u0161n\u011B pou\u017Eit pro anal\u00FDzu \u00FA\u010Dinnost\u00ED sb\u011Bru n\u00E1boje indukovan\u00E9ho \u010D\u00E1sticemi alfa a beta ve standardn\u00EDch i okysli\u010Den\u00FDch k\u0159em\u00EDkov\u00FDch detektorech po jejich oz\u00E1\u0159en\u00ED protony s energi\u00ED 10 MeV a fluencemi z intervalu od 1011 po 3x1014 p/cm2."@cs . . . . . "Charron, S." . "P(1P04LA211), P(1P04LA212), P(GA202/04/1395), Z(MSM6840770029)" . "RIV/68407700:21670/07:15142578!RIV08-GA0-21670___" . "The Hecht model describes the charge collection efficiency of semiconductor detectors using the mean free path of the charge carriers. While the fits to data are very good for non-irradiated detectors, modifications to the model are necessary to take into account the structural changes in the detectors induced by their exposure to high particle fluences. A modified model is presented. In this model, the mean free path depends on the shape of the electric field and on the charge carrier lifetimes. The lifetimes were measured experimentally from the front- and back-illuminations of the detectors by 660nm laser light and by particles from a 241Am source. This new Hecht model was successfully fitted to alpha and beta charge collection efficiencies of standard and oxygenated silicon detectors after their irradiation by 10MeV protons with fluences varying from 1011 to 3x1014 p/cm2."@en . . "Modified Hecht Model qualifying Radiation Damage in Standard and Oxygenated Silicon Detectors from 10MeV Protons" . "[050EB4C69A12]" . "Houdayer, A." . . "2"^^ . . "Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment" . . . . "5"^^ . "Modified Hecht Model qualifying Radiation Damage in Standard and Oxygenated Silicon Detectors from 10MeV Protons" . "Modifikovan\u00FD Hecht\u016Fv model kvalifikuj\u00EDc\u00ED radia\u010Dn\u00ED po\u0161kozen\u00ED ve standardn\u00EDch a okysli\u010Den\u00FDch k\u0159em\u00EDkov\u00FDch detektorech po\u0161kozen\u00FDch protony o energii 10 MeV"@cs . "Lebel, L." . . . "1" . "The Hecht model describes the charge collection efficiency of semiconductor detectors using the mean free path of the charge carriers. While the fits to data are very good for non-irradiated detectors, modifications to the model are necessary to take into account the structural changes in the detectors induced by their exposure to high particle fluences. A modified model is presented. In this model, the mean free path depends on the shape of the electric field and on the charge carrier lifetimes. The lifetimes were measured experimentally from the front- and back-illuminations of the detectors by 660nm laser light and by particles from a 241Am source. This new Hecht model was successfully fitted to alpha and beta charge collection efficiencies of standard and oxygenated silicon detectors after their irradiation by 10MeV protons with fluences varying from 1011 to 3x1014 p/cm2." . . "576" . . "Modifikovan\u00FD Hecht\u016Fv model kvalifikuj\u00EDc\u00ED radia\u010Dn\u00ED po\u0161kozen\u00ED ve standardn\u00EDch a okysli\u010Den\u00FDch k\u0159em\u00EDkov\u00FDch detektorech po\u0161kozen\u00FDch protony o energii 10 MeV"@cs . "75;79" . "Modified Hecht Model qualifying Radiation Damage in Standard and Oxygenated Silicon Detectors from 10MeV Protons"@en . "0168-9002" . . "NL - Nizozemsko" . "RIV/68407700:21670/07:15142578" . "434743" . . . "Posp\u00ED\u0161il, Stanislav" . . "Charbonnier, S." .