"Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma" . "We study effects of low temperature hydrogen plasma treatment (200 \u2013 300 \u00B0C) done in two different microwave plasma reactors (linear and focused plasma) on functionality of diamond solution-gated field-effect transistors (FET) covered with various encapsulation (ma-P, OFPR, SU8, Si3N4) and with proteins adsorbed on the gate. Three-dimensional transistor microstructures (20 \u03BCm) are made of nanocrystalline hydrogen terminated intrinsic diamond that is grown on Si/SiO2 substrates by selective seeding and microwave plasma CVD growth. The hydrogen-plasma treatment in linear plasma system at 200 \u00B0C removes the proteins from the gate as evidenced by atomic force microscopy, keeps the FET fully operational, and renews solution-gated FET sensitivity to protein adsorption (unlike rinsing in solutions) as evidenced by reproducible shift of transfer characteristics by -30 mV." . "I, P(GAP108/12/0996), P(GBP108/12/G108), P(GD202/09/H041), S" . "RS - Srbsk\u00E1 republika" . . "8" . "5"^^ . . "Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma" . . "104676" . "Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma"@en . "We study effects of low temperature hydrogen plasma treatment (200 \u2013 300 \u00B0C) done in two different microwave plasma reactors (linear and focused plasma) on functionality of diamond solution-gated field-effect transistors (FET) covered with various encapsulation (ma-P, OFPR, SU8, Si3N4) and with proteins adsorbed on the gate. Three-dimensional transistor microstructures (20 \u03BCm) are made of nanocrystalline hydrogen terminated intrinsic diamond that is grown on Si/SiO2 substrates by selective seeding and microwave plasma CVD growth. The hydrogen-plasma treatment in linear plasma system at 200 \u00B0C removes the proteins from the gate as evidenced by atomic force microscopy, keeps the FET fully operational, and renews solution-gated FET sensitivity to protein adsorption (unlike rinsing in solutions) as evidenced by reproducible shift of transfer characteristics by -30 mV."@en . "Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma"@en . "Ukraintsev, E." . "International Journal of Electrochemical Science" . "Nanocrystalline Diamond; Solution-gated Field-effect Transistor; Low Temperature Hydrogen Termination; Proteins; Encapsulation"@en . . "1"^^ . . . "21340" . . "RIV/68407700:21340/13:00211850!RIV14-MSM-21340___" . "Kromka, A." . "Rezek, B." . . "2" . "RIV/68407700:21340/13:00211850" . "Neykova, Neda" . . . . "12"^^ . . . . . . "1452-3981" . . . . "Neykova, Neda" . "Kr\u00E1tk\u00E1, M." . "[44DDBA96DD18]" . . "000316565800005" . .