"RIV/68407700:21340/06:04126689" . "Nen\u00ED k dispozici"@cs . "Pelant, I." . . "1"^^ . "515" . . . . "RIV/68407700:21340/06:04126689!RIV07-AV0-21340___" . "Nen\u00ED k dispozici"@cs . "473784" . "A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias." . . "Fojt\u00EDk, Anton" . . "Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure"@en . "Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure" . . "Stuchl\u00EDk, J." . . "Valenta, J." . "[B6F2D76D4AF7]" . "775;777" . "0" . . "Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure"@en . "3"^^ . "Nen\u00ED k dispozici"@cs . . "CH - \u0160v\u00FDcarsk\u00E1 konfederace" . "P(KAN400670651), S" . "Thin Solid Films" . "electroluminescence; pin diode; quantum dot; quantum nanostructure; silicon nanocrystal"@en . . "0040-6090" . . . "Ko\u010Dka, J." . "6"^^ . . "Stuchl\u00EDkov\u00E1, T. H." . "Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure" . . . "A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias."@en . . . "21340" .