"Optical and Structural Properties of Microcrystalline Silicon, Grown by Microwave PECVD" . . "neuvedeno" . "M\u00FCnchen" . "Bierbericher, A." . . "Optick\u00E9 a strukturn\u00ED vlastnosti mikrokrystalick\u00E9ho k\u0159em\u00EDku, vyroben\u00E9ho mikrovlnnou PECVD"@cs . "Z(MSM6840770021)" . "Micro crystalline Silicon PECVD Optical Properties"@en . . . "534683" . . . "Zkoumali jsme deposici mikrokrystalick\u00E9ho k\u0159em\u00EDku mikrovlnnou technikou PECVD. MWPECVD je vynikaj\u00EDc\u00ED prost\u0159edek ke zprost\u0159edkov\u00E1n\u00ED rychl\u00E9 depozice k\u0159em\u00EDku p\u0159i n\u00EDzk\u00FDch teplot\u00E1ch, nicm\u00E9n\u011B, tento rychl\u00FD r\u016Fst je \u010Dasto doprov\u00E1zen vysokou porositou. Za \u00FA\u010Delem dosa\u017Een\u00ED celistvosti k\u0159em\u00EDkov\u00FDch vrstev jsme zkoumali parametry prostoru rozs\u00E1hl\u00E9 depozice."@cs . "Ho\u010F\u00E1kov\u00E1, Lenka" . "Muffler, H." . . "We investigated the deposition of c-Si by microwave PECVD. MWPECVD is an excellent tool for fast deposition of silicon at low temperatures, however, this fast growth is often accompanied with high porosity. In order to obtain dense Si layers we investigated a large deposition parameter space." . . "21340" . . "Optical and Structural Properties of Microcrystalline Silicon, Grown by Microwave PECVD"@en . "Optick\u00E9 a strukturn\u00ED vlastnosti mikrokrystalick\u00E9ho k\u0159em\u00EDku, vyroben\u00E9ho mikrovlnnou PECVD"@cs . "Soppe, W." . . . "RIV/68407700:21340/05:04116669" . "8"^^ . "[8A9144E3A633]" . . "Devilee, G." . . "Optical and Structural Properties of Microcrystalline Silicon, Grown by Microwave PECVD" . "Vanecek, M." . "Poruba, A." . "Optical and Structural Properties of Microcrystalline Silicon, Grown by Microwave PECVD"@en . "RIV/68407700:21340/05:04116669!RIV06-MSM-21340___" . "1"^^ . "We investigated the deposition of c-Si by microwave PECVD. MWPECVD is an excellent tool for fast deposition of silicon at low temperatures, however, this fast growth is often accompanied with high porosity. In order to obtain dense Si layers we investigated a large deposition parameter space."@en . "Burgers, A." . . "3-936338-19-1" .