"Praha" . "RIV/68407700:21340/04:04105382!RIV/2005/MSM/213405/N" . "2"^^ . . "absorption loss; back reflector; mobility recombination; photoconductivity; roughness"@en . . . "Proton Irradiation and Temperature Annealing of Microcrystalline Silicon"@en . . "Proton Irradiation and Temperature Annealing of Microcrystalline Silicon"@cs . "For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF)."@en . "1"^^ . "Z(MSM 210000021)" . "21340" . "Proton Irradiation and Temperature Annealing of Microcrystalline Silicon" . "2004-08-30+02:00"^^ . . "For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF)." . "2"^^ . . . "Lednice" . . . "Proton Irradiation and Temperature Annealing of Microcrystalline Silicon"@cs . "The 14th Seminar of Development of Material Science in Research and Education" . "[0D2F8A583331]" . . "582914" . "MAXDORF" . "17 ; 18" . "For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF)."@cs . . "Poruba, A." . . . "Proton Irradiation and Temperature Annealing of Microcrystalline Silicon"@en . . . "Ho\u010F\u00E1kov\u00E1, Lenka" . "80-7345-032-1" . . "Proton Irradiation and Temperature Annealing of Microcrystalline Silicon" . . "RIV/68407700:21340/04:04105382" . .