. "The final goal is to develop a solid state photodetector with picosecond timing resolution and stability and a spectral sensitivity beyond 1100 nanometres. The technology development steps on the Ge-Si epitaxial layer are presented together with the first results of the preparation of the shallow junction and its parameters." . "Proch\u00E1zka, Ivan" . . "SiGe; photon counting"@en . . . "Sopko, Bruno" . . . . . "2004-03-22+01:00"^^ . . . "Hamal, Karel" . . "P(GA102/03/0316)" . . "SiGe Avalanche Photodiode for Geiger Mode Operation"@en . "2"^^ . "SiGe Avalanche Photodiode for Geiger Mode Operation" . . "5"^^ . "Proceedings of Workshop 2004" . "5"^^ . "RIV/68407700:21340/04:04104788!RIV/2005/GA0/213405/N" . "Bla\u017Eej, Josef" . "SiGe Avalanche Photodiode for Geiger Mode Operation" . . "Nen\u00ED k dispozici"@cs . "21340" . "SiGe Avalanche Photodiode for Geiger Mode Operation"@en . "\u010Cesk\u00E9 vysok\u00E9 u\u010Den\u00ED technick\u00E9 v Praze" . "[06B0C404CB9A]" . "RIV/68407700:21340/04:04104788" . "586149" . "Nen\u00ED k dispozici"@cs . "The final goal is to develop a solid state photodetector with picosecond timing resolution and stability and a spectral sensitivity beyond 1100 nanometres. The technology development steps on the Ge-Si epitaxial layer are presented together with the first results of the preparation of the shallow junction and its parameters."@en . "80-01-02945-X" . "Chren, Dominik" . . "456 ; 457" . "Praha" . . "Praha" . . . . "Nen\u00ED k dispozici"@cs .