. "Wyrsch, N." . "RIV/68407700:21340/03:04092640!RIV/2004/MSM/213404/N" . "optical absorption coefficient, transmittance"@en . . "7"^^ . . "Beitlerov\u00E1, A." . . "630469" . . . . "Optical absorption coefficient of amorphous and microcrystalline silicon was determined in a spectral range 400-3100 nm and temperature range 77-350 K. Transmittance measurement and Fourier transform photocurrent spectroscopy were used. The measured data served as an input for our optical model of amorphous/microcrystalline solar cell tandem. Differences in the current generated in the amorphous and the microcrystalline parts were computed, for the operation temperature between -20 \u00B0C and + 80 \u00B0C. Optical spectra of microcrystalline silicon were compared to the spectrum of silicon on sapphire (without hydrogen and hydrogenated) and observed difference was interpreted in terms of a different defect density and higher disorder of microcrystalline Si."@en . "Z(MSM 210000022)" . "21340" . . "[6B839A8DD0A1]" . "Van\u011B\u010Dek, M." . "1"^^ . "Shah, A." . "Temperature Dependence of the Optical Absorption Coefficient of Microcrystalline Silicon" . "Temperature Dependence of the Optical Absorption Coefficient of Microcrystalline Silicon" . . "Campos do Jordao" . . "M\u00FCllerov\u00E1, Lenka" . "2003-08-25+02:00"^^ . "\u0160pringer, J." . "Abstracts of the ICAMS 20th - Science and Technology" . "Sao Paulo" . "Poruba, A." . "Temperature Dependence of the Optical Absorption Coefficient of Microcrystalline Silicon"@en . "Temperature Dependence of the Optical Absorption Coefficient of Microcrystalline Silicon"@en . . "Brasilian Microelectronics Society" . "1"^^ . . . "RIV/68407700:21340/03:04092640" . "112 ; 112" . "Optical absorption coefficient of amorphous and microcrystalline silicon was determined in a spectral range 400-3100 nm and temperature range 77-350 K. Transmittance measurement and Fourier transform photocurrent spectroscopy were used. The measured data served as an input for our optical model of amorphous/microcrystalline solar cell tandem. Differences in the current generated in the amorphous and the microcrystalline parts were computed, for the operation temperature between -20 \u00B0C and + 80 \u00B0C. Optical spectra of microcrystalline silicon were compared to the spectrum of silicon on sapphire (without hydrogen and hydrogenated) and observed difference was interpreted in terms of a different defect density and higher disorder of microcrystalline Si." . . .