. . "Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance." . . "RIV/68407700:21230/11:00183830" . . "Power Semiconductors - State of Art and Future Trends"@en . "New York" . . . . . "222206" . "RIV/68407700:21230/11:00183830!RIV12-MSM-21230___" . "Proceedings of the fourth global conference on power control and optimization" . "power semiconductor devices; IGCT; IGBT; power MOSFETs; SJ FETs; SiC devices; GaN devices"@en . "Z(MSM6840770017)" . "Power Semiconductors - State of Art and Future Trends" . . . "American Institute of Physics" . . . . "21230" . "Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance."@en . . . "Power Semiconductors - State of Art and Future Trends"@en . "1"^^ . . "Benda, V\u00EDt\u011Bzslav" . "[A64371DD0EA1]" . . "0094-243X" . . . "978-0-7354-0893-7" . . "2010-12-02+01:00"^^ . "10.1063/1.3592437" . "000291830300002" . . "1"^^ . "9"^^ . "Kuching," . "Power Semiconductors - State of Art and Future Trends" .