. "Power semiconductor devices; silicon; diode; transistor; thyristor"@en . "Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, the low-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands." . "Design and Technology of High-Power Silicon Devices"@en . "Design and Technology of High-Power Silicon Devices" . . . . "Lodz" . "193513" . "6"^^ . . "http://www.mixdes.org/" . . "Vobeck\u00FD, Jan" . . "Gliwice" . . "Z(MSM6840770017)" . "978-83-932075-1-0" . . . . "21230" . . "Design and Technology of High-Power Silicon Devices"@en . "RIV/68407700:21230/11:00182234" . . "1"^^ . . "Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, the low-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands."@en . . "2011-06-16+02:00"^^ . "Technical University of Lodz" . . . "1"^^ . . "RIV/68407700:21230/11:00182234!RIV12-MSM-21230___" . . "Design and Technology of High-Power Silicon Devices" . "[133021305E4C]" . "2011 Proceedings of the 18th International Conference" .