"0026-2714" . "RIV/68407700:21230/11:00177777!RIV12-MSM-21230___" . . "213533" . . . . . . "Molybdenum and low-temperature annealing of a silicon power P-i-N diode"@en . . "Z(MSM6840770017)" . "Komarnitskyy, Volodymyr" . . "RIV/68407700:21230/11:00177777" . . . . "000288578200009" . "51" . "Komarnitskyy, Volodymyr" . . "[64EF9A08522D]" . "3" . "Z\u00E1hlava, V\u00EDt" . "Microelectronics Reliability" . "Vobeck\u00FD, Jan" . "10.1016/j.microrel.2010.09.021" . "silicon; power diode; molybdenum; helium; diffusion"@en . . "NL - Nizozemsko" . "6"^^ . "http://www.elsevier.com/" . "Molybdenum and low-temperature annealing of a silicon power P-i-N diode" . . . "21230" . "High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum." . . "Molybdenum and low-temperature annealing of a silicon power P-i-N diode"@en . "3"^^ . "High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum."@en . . . "3"^^ . . "Molybdenum and low-temperature annealing of a silicon power P-i-N diode" .