"The Thin Film Capacitors with AlN Dielectric"@en . "21230" . . "The Thin Film Capacitors with AlN Dielectric"@en . . "Ostrava" . . "[82FC82D3BBAC]" . "Cinert, J." . "reactive sputtering; thin film dielectric layer"@en . . "Olomouc" . . . . "2010-10-12+02:00"^^ . "1"^^ . . . "RIV/68407700:21230/10:00171381!RIV11-MSM-21230___" . "Z(MSM6840770021)" . . "The Thin Film Capacitors with AlN Dielectric" . "RIV/68407700:21230/10:00171381" . "4"^^ . "NANOCON 2010" . "The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric layers were deposited at different conditions of sputtering. The power plasma generator and time of sputtering were changed in useful range. Part of work is concerned to investigation of dependence of electrical capacity of thick film capacitors on thickness of dielectric layer. Thickness and thus electrical capacity are depending on distance between target and substrate. Thickness of dielectric layer was measured by using of confocal microscope." . "2"^^ . "The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric layers were deposited at different conditions of sputtering. The power plasma generator and time of sputtering were changed in useful range. Part of work is concerned to investigation of dependence of electrical capacity of thick film capacitors on thickness of dielectric layer. Thickness and thus electrical capacity are depending on distance between target and substrate. Thickness of dielectric layer was measured by using of confocal microscope."@en . . "978-80-87294-18-5" . "292794" . . . . "Tanger s.r.o." . "Beshajov\u00E1 Pelik\u00E1nov\u00E1, Ivana" . "The Thin Film Capacitors with AlN Dielectric" . .