"2"^^ . . "The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration."@en . "RIV/68407700:21230/09:00158579!RIV10-MSM-21230___" . "2"^^ . . "3" . . . . "The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration." . . "1938-5862" . . . "Komarnitskyy, Volodymyr" . "[98C6D656FD46]" . "23" . . . "Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon" . . "P(GP102/08/P488), P(LC06041), Z(MSM6840770014)" . . . "Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon" . "Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon"@en . . . "21230" . . "RIV/68407700:21230/09:00158579" . "Silicon; Proton Implantation; Radiation Defects; Hydrogen Donors"@en . "ECS Transactions: Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009)" . "Hazdra, Pavel" . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon"@en . . . "312775" . "11"^^ .