"Oswald, Ji\u0159\u00ED" . . "P(GA102/06/0424), Z(MSM6840770014)" . "RIV/68407700:21230/08:03148580" . "Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement" . "[A51BA6D47877]" . "The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm." . "Pe\u0159ina, V." . "Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement"@en . . "Praha" . "Studium vlastnost\u00ED vrstev GaN s dotac\u00ED Er3+ a Er3+ + Yb3+ iont\u016F pomoc\u00ED m\u011B\u0159en\u00ED transmisn\u00EDch spekter"@cs . . "Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement"@en . . "0277-786X" . "RIV/68407700:21230/08:03148580!RIV09-MSM-21230___" . "6"^^ . . . "6"^^ . "Proceedings of SPIE Photonics, Devices, and Systems IV - Volume 7138" . . . "Erbium, Ytterbium; Gallium nitride; Transmittance, Photoluminescence"@en . . "SPIE" . "2008-08-27+02:00"^^ . . . . "1"^^ . "Je\u0159\u00E1bek, V\u00EDt\u011Bzslav" . . . . "21230" . "\u0160pirkov\u00E1, Jarmila" . "\u010Cl\u00E1nek popisuje vlastnosti vrstev GaN s dotac\u00ED Er3+ a Er3+ + Yb3+ iont\u016F vyroben\u00FDch pomoc\u00ED magnetonov\u00E9ho napra\u0161ov\u00E1n\u00ED."@cs . . . "Bellingham" . . "Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement" . "Studium vlastnost\u00ED vrstev GaN s dotac\u00ED Er3+ a Er3+ + Yb3+ iont\u016F pomoc\u00ED m\u011B\u0159en\u00ED transmisn\u00EDch spekter"@cs . "373240" . . . "The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm."@en . "H\u00FCttel, Ivan" . "Prajzler, V\u00E1clav" .