. "Z(MSM 212300017)" . "A Note on Trap Recombination in High Voltage Device Structures" . . "RIV/68407700:21230/03:03093421" . "A Note on Trap Recombination in High Voltage Device Structures"@en . "[9629098F5708]" . "The carrier lifetime is a very important parameter influencing all important characteristics of bipolar devices both discrete and integrated structures and carrier lifetime tailoring is an important part of power semiconductor device technology."@en . "RIV/68407700:21230/03:03093421!RIV/2004/MSM/212304/N" . "2003-12-16+01:00"^^ . . . . "1"^^ . . "The carrier lifetime is a very important parameter influencing all important characteristics of bipolar devices both discrete and integrated structures and carrier lifetime tailoring is an important part of power semiconductor device technology." . "1"^^ . "A Note on Trap Recombination in High Voltage Device Structures" . "Hong Kong" . . "Hong Kong" . . . "Benda, V\u00EDt\u011Bzslav" . "309 ; 312" . "2003 IEEE Conference on Electron Devices and Solid-State Circuits" . . "Hong Kong University of Science and Technology" . "4"^^ . . . . "Local Centres, Recombination, Lifetime"@en . . "597034" . . . "21230" . "A Note on Trap Recombination in High Voltage Device Structures"@en . "0-7803-7749-4" .