"semiconductor"@en . . . "2"^^ . "INSA de Lyon - URGC G\u00E9otechnique" . . . "21110" . . "[DE16BF2BDEB9]" . "Kratochv\u00EDl, Jan" . . "1"^^ . "3"^^ . "0"^^ . . "0"^^ . . "P(GA106/00/1109), Z(MSM 210000021)" . "Francheville" . "Lyon" . "22;23" . . "Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip" . . "RIV/68407700:21110/02:01078636" . . "The need of a simulation of more complicated experiments performed on f.c.c based compound semiconductors call for a model with more active slip systems. Especially, the aim is to obtain the constitutive laws making it possible to describe the plastic behavior of GaAs crystals indented at room temperature. The present paper proposes a model inspired by the generalised constitutive laws for f.c.c. single crystals. The simulation of uniaxial compression tests performed on GaAs single crystals at medium temperatures is presented and the properties of the model are discussed" . "Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip"@en . . "RIV/68407700:21110/02:01078636!RIV/2003/GA0/211103/N" . . "Abstracts: Colloque Plasticit\u00E9 2002" . "653798" . "The need of a simulation of more complicated experiments performed on f.c.c based compound semiconductors call for a model with more active slip systems. Especially, the aim is to obtain the constitutive laws making it possible to describe the plastic behavior of GaAs crystals indented at room temperature. The present paper proposes a model inspired by the generalised constitutive laws for f.c.c. single crystals. The simulation of uniaxial compression tests performed on GaAs single crystals at medium temperatures is presented and the properties of the model are discussed"@en . . "Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip" . "Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip"@en . "2002-05-15+02:00"^^ . . .