"Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen"@en . . . . "I, P(GAP204/12/0805), P(LM2011029)" . "12"^^ . "10.1103/PhysRevB.90.064104" . . . "K\u00E4rner, T." . "Physical Review. B" . . . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "90" . . "Zazubovich, S." . "Nikl, Martin" . . . "Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen" . . "1098-0121" . "Rosa, Jan" . "We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200\u2013290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively." . . "ESR; yttrium orthosilicates; ESEEM; charge traps; F+ centers"@en . "Hybler, Ji\u0159\u00ED" . "[3BD44A88238D]" . "000339994200003" . "Buryi, Maksym" . . . . "McClellan, K. J." . "We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200\u2013290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively."@en . "Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen"@en . . "Stanek, C. R." . "Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen" . "RIV/68378271:_____/14:00432629" . . . . . "14167" . "6" . "6"^^ . . . . "Laguta, Valentyn" . "RIV/68378271:_____/14:00432629!RIV15-GA0-68378271" . "10"^^ . "Savchenko, Dariia" .