"Fejfar, Anton\u00EDn" . "10.1002/pssb.201350377" . "DE - Spolkov\u00E1 republika N\u011Bmecko" . "Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping" . "3"^^ . "Nanu, M." . "Physica Status Solidi B-Basic Solid State Physics" . "Rath, J. K." . . "Schropp, R. E. I." . "We present our recent study on SnS particles in the backdrop of significant developements that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performence is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a third-generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles."@en . . "Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping"@en . "Nanu, D. E." . . . . "Vetushka, Aliaksi" . "000339665200003" . . . "chalcogenides; chemical bath deposition; core-shell particles; quantum dots; solar cells; tin sulfide"@en . . "Prastani, C." . . . "[EFA6630A0535]" . . . "We present our recent study on SnS particles in the backdrop of significant developements that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performence is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a third-generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles." . . "Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping" . "0370-1972" . "RIV/68378271:_____/14:00432332" . "13"^^ . . . "251" . "I, P(GA13-25747S), P(LM2011026)" . "H\u00FDvl, Mat\u011Bj" . "RIV/68378271:_____/14:00432332!RIV15-GA0-68378271" . . "8"^^ . . "Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping"@en . "16297" . . "7" . . . . .