"Vojs, M." . . "AlGaN/GaN high electron mobility transistors for high temperatures" . "This work deals with design, technology and characterization of high temperature stable AlGaN/GaN based high electron mobility transistors (HEMTs) able to work in harsh environments. The originality of the concept proposal consists in research of new (a) progressive thin layers based on metal oxides and/or their combinations for Schottky gate electrodes, (b) metal stacks with improved surface morphology for ohmic contacts with low specific contact resistivity values and (c) possibilities of hybrid integration of the piezoelectric AlGaN/GaN material system with diamond layers in order to improve the heat dissipation in the channel of the HEMTs." . . "2013-10-10+02:00"^^ . . . "10"^^ . "978-80-971179-2-4" . "RIV/68378271:_____/13:00424328" . . "5"^^ . . "AlGaN/GaN high electron mobility transistors for high temperatures"@en . "electron mobility; crystalline diamond substrates; GaN"@en . . "2"^^ . "Vincze, A." . "AlGaN/GaN high electron mobility transistors for high temperatures" . . . "Bratislava" . "Dobro\u010Dka, E." . "\u0160trbsk\u00E9 Pleso" . . . . "I\u017E\u00E1k, Tibor" . . "Lalinsk\u00FD, T." . "I" . "Slovensk\u00E1 v\u00E1kuov\u00E1 spolo\u010Dnos\u0165" . "Vanko, G." . "Vallo, M." . "Perspekt\u00EDvne v\u00E1kuov\u00E9 met\u00F3dy a technol\u00F3gie (Perspective vacuum methods and technologies)" . . . "Dzuba, J." . "RIV/68378271:_____/13:00424328!RIV14-AV0-68378271" . "R\u00FDger, I." . "60050" . "I\u017E\u00E1k, Tibor" . . "Kromka, Alexander" . "AlGaN/GaN high electron mobility transistors for high temperatures"@en . "This work deals with design, technology and characterization of high temperature stable AlGaN/GaN based high electron mobility transistors (HEMTs) able to work in harsh environments. The originality of the concept proposal consists in research of new (a) progressive thin layers based on metal oxides and/or their combinations for Schottky gate electrodes, (b) metal stacks with improved surface morphology for ohmic contacts with low specific contact resistivity values and (c) possibilities of hybrid integration of the piezoelectric AlGaN/GaN material system with diamond layers in order to improve the heat dissipation in the channel of the HEMTs."@en . "[9AE4D52CFA06]" .