. "000325671400021" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "4"^^ . "Krasnikov, A." . "RIV/68378271:_____/13:00396533" . . "Single crystallinefilms of Bi-doped Y2SiO5 are studied at 4.2-350 K by the time-resolved luminescence methods under excitation in the 3.8-6.2 eV energy range. Ultraviolet luminescence of Y2SiO5:Bi (3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion, respectively. The lowest-energy excitation band of this emission, located at 4.5 eV, is assigned to the 1S0 3P1 transitions of a free Bi3+ ion. The phenomenological model is proposed to describe the excitedstate dynamics of Bi3+ centers in Y2SiO5:Bi, and parameters of the triplet RES are determined." . "7"^^ . . "Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films"@en . . "Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films"@en . "[45595B468579]" . "Sept" . . "Babin, Vladimir" . . "Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films" . . . "Gorbenko, V." . "Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films" . "3"^^ . "56" . . . . "Babin, Vladimir" . "Mih\u00F3kov\u00E1, Eva" . "Zazubovich, S." . . "Zorenko, Y." . "96101" . "RIV/68378271:_____/13:00396533!RIV14-GA0-68378271" . . "Radiation Measurements" . . . "10.1016/j.radmeas.2013.04.001" . "I, P(GAP204/12/0805)" . . "Nikl, Martin" . "luminescence; Bi3+-doped oxyorthosilicates; single crystalline films"@en . . . "1350-4487" . "Single crystallinefilms of Bi-doped Y2SiO5 are studied at 4.2-350 K by the time-resolved luminescence methods under excitation in the 3.8-6.2 eV energy range. Ultraviolet luminescence of Y2SiO5:Bi (3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion, respectively. The lowest-energy excitation band of this emission, located at 4.5 eV, is assigned to the 1S0 3P1 transitions of a free Bi3+ ion. The phenomenological model is proposed to describe the excitedstate dynamics of Bi3+ centers in Y2SiO5:Bi, and parameters of the triplet RES are determined."@en .