"Jastrab\u00EDk, L." . . "Sept" . "TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrate holder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation." . . "TiO2 films; ion bombardment; film structure; nanoindentation; phase transformation"@en . "Boh\u00E1\u010D, Petr" . "Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates" . . . "542" . . "Vorl\u00ED\u010Dek, Vladim\u00EDr" . "Thin Solid Films" . "Kulykovskyy, Valeriy" . . . "86958" . "\u010Ctvrtl\u00EDk, R." . "[83977CC889BA]" . . "I, P(ED2.1.00/03.0058), P(EE2.3.20.0017), P(GAP108/12/1941), P(TA03010743)" . . "Filip, J." . "Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates"@en . . . "9"^^ . . . . "Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates" . . "3"^^ . . "TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrate holder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation."@en . . "RIV/68378271:_____/13:00396224!RIV14-GA0-68378271" . "RIV/68378271:_____/13:00396224" . . "000323859400015" . . "10.1016/j.tsf.2013.06.070" . . . "Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates"@en . . . "CH - \u0160v\u00FDcarsk\u00E1 konfederace" . "0040-6090" . "6"^^ . .