. "Vacuum" . "0042-207X" . . . . "Vac\u00EDk, Ji\u0159\u00ED" . "[DA7F5AEBD5FC]" . "SI" . "J\u00E4ger, Ale\u0161" . "Jastrab\u00EDk, Lubom\u00EDr" . "Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment" . "Dejneka, Alexandr" . . . . "We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surface of a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates the structural consequences of fast cluster energy dissipation in solids such as local heating and shock waves." . . "Dejneka, Alexandr" . "Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment"@en . "Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment" . "We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surface of a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates the structural consequences of fast cluster energy dissipation in solids such as local heating and shock waves."@en . . . "Narumi, K." . . "000322805900011" . . "Naramoto, H." . "Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment"@en . "5"^^ . "Chvostov\u00E1, Dagmar" . "energetic clusters; silicon; surface modification; amorphization; nanostructure; Raman scattering; ion channeling"@en . "10.1016/j.vacuum.2013.05.017" . . "66994" . "9"^^ . "98" . "RIV/68378271:_____/13:00395956!RIV14-GA0-68378271" . . . "Lavrentiev, Vasyl" . "7"^^ . . . . . . . . "I, P(GBP108/12/G108)" . . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "Vorl\u00ED\u010Dek, Vladim\u00EDr" . "RIV/68378271:_____/13:00395956" . .