"Kindl, Dobroslav" . "Ne\u010Das, V." . "0038-1101" . . "I, P(ED2.1.00/03.0058), P(EE2.3.30.0004)" . "Baldini, M." . . "Gombia, E." . . "Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs" . . . "000317701500015" . "2"^^ . . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "Dubeck\u00FD, M." . "Schottky barrier; low-bias transport; semi-insulating GaAs; low work-function; high resistence; low leakage current; blocking contact"@en . "[03E82F424B5C]" . . . "Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs"@en . . "RIV/68378271:_____/13:00391737!RIV14-AV0-68378271" . . "Dubeck\u00FD, F." . . . "5"^^ . . "82" . . . . "10.1016/j.sse.2013.01.021" . "Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs" . "APR" . . . . "Hub\u00EDk, Pavel" . "RIV/68378271:_____/13:00391737" . . "Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs"@en . "7"^^ . . . "Current\u2013voltage characteristics of surface barrier diodes based on SI\u2013GaAs are measured for different metal combinations used for top and bottom contacts. Up to two orders of magnitude current reduction is observed for the structures involving Mg metallization with respect to those without Mg. The strong blocking ability of the Mg contact is attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI\u2013GaAs free carrier concentration."@en . "Solid-State Electronics" . . "112589" . "Current\u2013voltage characteristics of surface barrier diodes based on SI\u2013GaAs are measured for different metal combinations used for top and bottom contacts. Up to two orders of magnitude current reduction is observed for the structures involving Mg metallization with respect to those without Mg. The strong blocking ability of the Mg contact is attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI\u2013GaAs free carrier concentration." .