"IEEE Transactions on Nuclear Science" . "000310143300019" . "Pr: (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. 5d-4f emission within 300\u2013400 nm accompanied by weak 4f-4f emission in 480\u2013650 nm were observed in Ga 0\u201360 at.% substituted samples. Only Pr3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr1%:Lu2Y1Ga2Al2O12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure."@en . . "Yoshikawa, A." . . "RIV/68378271:_____/12:00389331" . . "Nikl, Martin" . "0018-9499" . "Tsutumi, K." . "2"^^ . "Yanagida, T." . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "Fukabori, A." . "Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions" . "59" . . . "Pejchal, Jan" . . "Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions"@en . . "9"^^ . . "5" . "Endo, T." . "Z(AV0Z10100521)" . "[960B54EDF8B9]" . . "5"^^ . . "oxides; scintillator materials; scintillators; single crystal growth"@en . "10.1109/TNS.2012.2191621" . . . . . "140930" . "Kamada, K." . "Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions" . . "Fujimoto, Y." . "RIV/68378271:_____/12:00389331!RIV13-AV0-68378271" . "Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions"@en . "Pr: (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. 5d-4f emission within 300\u2013400 nm accompanied by weak 4f-4f emission in 480\u2013650 nm were observed in Ga 0\u201360 at.% substituted samples. Only Pr3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr1%:Lu2Y1Ga2Al2O12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure." . . . .