. "Verveniotis, Elisseos" . . . "5"^^ . . . . "000310394700046" . "358" . . "0022-3093" . . . . "Generating ordered Si nanocrystals via atomic force microscopy"@en . . "\u0160\u00EDpek, Emil" . . "4"^^ . . "Generating ordered Si nanocrystals via atomic force microscopy" . "[A0EE95D45F7F]" . . "We describe two successful routes for generating ordered arrays of Si nanocrystals by using atomic force microscopy (AFM) and amorphous silicon thin films (200\u2013400 nm) on Ti/Ni coated glass substrates. First, we show that field-enhanced metal-induced solid phase crystallization at room temperature can be miniaturized to achieve highly spatially localized (below 100 nm) current-induced crystallization of the amorphous silicon films using a sharp tip in AFM. In the second route, resistive nano-pits are formed at controlled positions in the amorphous silicon thin films by adjusting (lowering and/or stabilizing) the exposure currents in the AFM process. Such templated substrates are further used to induce localized growth of Si nanocrystals in plasma-enhanced chemical vapor deposition process. In both cases the crystalline phase is identified in situ as features of enhanced current in current-sensing AFM maps."@en . . "RIV/68378271:_____/12:00383786!RIV13-GA0-68378271" . . . "Generating ordered Si nanocrystals via atomic force microscopy"@en . "RIV/68378271:_____/12:00383786" . . . "Generating ordered Si nanocrystals via atomic force microscopy" . "17" . . . "Ko\u010Dka, Jan" . "137848" . . "NL - Nizozemsko" . "10.1016/j.jnoncrysol.2011.12.018" . "Verveniotis, Elisseos" . . . . "AFM; CS-AFM; a-Si:H; electric crystallization; nickel"@en . "P(GD202/09/H041), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)" . . "Rezek, Bohuslav" . "We describe two successful routes for generating ordered arrays of Si nanocrystals by using atomic force microscopy (AFM) and amorphous silicon thin films (200\u2013400 nm) on Ti/Ni coated glass substrates. First, we show that field-enhanced metal-induced solid phase crystallization at room temperature can be miniaturized to achieve highly spatially localized (below 100 nm) current-induced crystallization of the amorphous silicon films using a sharp tip in AFM. In the second route, resistive nano-pits are formed at controlled positions in the amorphous silicon thin films by adjusting (lowering and/or stabilizing) the exposure currents in the AFM process. Such templated substrates are further used to induce localized growth of Si nanocrystals in plasma-enhanced chemical vapor deposition process. In both cases the crystalline phase is identified in situ as features of enhanced current in current-sensing AFM maps." . "Journal of Non-Crystalline Solids" . "Stuchl\u00EDk, Ji\u0159\u00ED" . "5"^^ .