. "Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method"@en . "2"^^ . "4"^^ . "single crystal growth; oxides; scintillator materials"@en . . "[7D8C5321C147]" . "Endo, T." . . . "Usuki, Y." . "Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method"@en . . . . "Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method" . . . "10"^^ . "RIV/68378271:_____/12:00379857!RIV13-AV0-68378271" . "Z(AV0Z10100521)" . . "Journal of Crystal Growth" . "Nikl, Martin" . "Fukabori, A." . "352" . "Ce: Gd2Lu1(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd2Lu1Ga3Al2O12 shows highest emission intensity. The light yield of Ce: Gd2Lu1Ga3Al2O12 sample with 3mm\u03C6x1mm size was around 24,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns."@en . "Tsutumi, K." . "Kamada, K." . "000306089300009" . "RIV/68378271:_____/12:00379857" . "1" . "Ce: Gd2Lu1(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd2Lu1Ga3Al2O12 shows highest emission intensity. The light yield of Ce: Gd2Lu1Ga3Al2O12 sample with 3mm\u03C6x1mm size was around 24,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns." . "Fujimoto, Y." . "166876" . "Yanagida, T." . . "Pejchal, Jan" . . "Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method" . "0022-0248" . . . . "10.1016/j.jcrysgro.2011.11.057" . "NL - Nizozemsko" . . . "Yoshikawa, A." .