"P(GPP204/10/P028), Z(AV0Z10100521)" . "The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 domain structure and possible disorder."@en . . . "1"^^ . "185661" . "Grosse, F." . "10.1103/PhysRevB.83.155317" . "Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction"@en . "RIV/68378271:_____/11:00364023" . . "Braun, W." . "[A1E5A0FA350A]" . . "15" . "Physical Review. B" . "Romanyuk, Olexandr" . . . "Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction" . . "Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction"@en . . "Romanyuk, Olexandr" . . "Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction" . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "Katmis, F." . . "1098-0121" . . "83" . "Riechert, H." . "III-V semiconductor surfaces; RHEED; surface reconstruction; MBE"@en . "Proessdorf, A." . . "6"^^ . "000292149600006" . . . . "The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 domain structure and possible disorder." . . "RIV/68378271:_____/11:00364023!RIV12-AV0-68378271" . "11"^^ .