. . . . "We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 11015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm9.75 cm large-area sensor and several 1 cm1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage."@en . . . "Development of n-on-p silicon sensors for very high radiation environments" . . . "Development of n-on-p silicon sensors for very high radiation environments"@en . . "0168-9002" . . "74"^^ . . "10.1016/j.nima.2010.04.080" . "Development of n-on-p silicon sensors for very high radiation environments"@en . "194080" . "Casse, G." . . "[5A70B2603746]" . "Betancourt, C." . . "7"^^ . "RIV/68378271:_____/11:00361396!RIV13-AV0-68378271" . "Brown, H." . . . "Allport, P. P." . "Bates, R." . . "P(LA08032), Z(AV0Z10100502), Z(MSM0021620859)" . "636" . "Affolder, A. A." . "Unno, Y." . . "B\u00F6hm, Jan" . . . "RIV/68378271:_____/11:00361396" . . "silicon; micro-strip; ATLAS; SLHC; sensor; radiation damage; p-type; n-in-p"@en . "1" . . . "Buttar, C." . . "000291416400005" . "Mike\u0161t\u00EDkov\u00E1, Marcela" . . . "Carter, J. R." . "2"^^ . "Nuclear Instruments & Methods in Physics Research Section A" . "We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 11015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm9.75 cm large-area sensor and several 1 cm1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage." . "Development of n-on-p silicon sensors for very high radiation environments" . "NL - Nizozemsko" .