. . . "Horrocks, B. R." . . . "Little, R." . "000285586800097" . . "24" . . . "9"^^ . "1094-4087" . "Ondi\u010D, Luk\u00E1\u0161" . . "silicon nanocrystals; ultrafast spectroscopy; photoluminescence spectroscopy"@en . "\u017D\u00EDdek, K." . "Femtosecond luminescence spectroscopy of core states in silicon nanocrystals" . . "Femtosecond luminescence spectroscopy of core states in silicon nanocrystals"@en . "P(IAA101120804), P(KAN400100701), P(LC510), S, Z(AV0Z10100521), Z(MSM0021620834)" . "Femtosecond luminescence spectroscopy of core states in silicon nanocrystals"@en . "9"^^ . "18" . "Mal\u00FD, P." . "Ondi\u010D, Luk\u00E1\u0161" . . . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "258963" . . "Optics Express" . "We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation." . "RIV/68378271:_____/10:00356926" . "[C7C71800A043]" . . "Troj\u00E1nek, F." . . . . . "3"^^ . . "RIV/68378271:_____/10:00356926!RIV11-MSM-68378271" . "We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation."@en . . "Pelant, Ivan" . "\u0160iller, L." . "Femtosecond luminescence spectroscopy of core states in silicon nanocrystals" . "Dohnalov\u00E1, Kate\u0159ina" . .