. . . . . "Rezek, Bohuslav" . "\u0160\u00EDpek, Emil" . "Ko\u010Dka, Jan" . "[645B24723F10]" . . "silicon; nanocrystals; crystallization"@en . . . "Zp\u016Fsob v\u00FDroby izolovan\u00FDch skupin mikroskopick\u00FDch k\u0159em\u00EDkov\u00FDch krystal\u016F" . "Zp\u016Fsob v\u00FDroby izolovan\u00FDch skupin mikroskopick\u00FDch k\u0159em\u00EDkov\u00FDch krystal\u016F" . "http://spisy.upv.cz/Patents/FullDocuments/301/301824.pdf" . . "301824" . "Method of making isolated groups of microscopic silicon crystals"@en . . . "Zp\u016Fsob v\u00FDroby izolovan\u00FDch skupin mikroskopick\u00FDch k\u0159em\u00EDkov\u00FDch krystal\u016F v tenk\u00E9 vrstv\u011B amorfn\u00EDho k\u0159em\u00EDku nanesen\u00E9 na kovov\u00E9 podlo\u017Ece prob\u00EDh\u00E1 za pomoci procesu krystalizace z pevn\u00E9 f\u00E1ze indukovan\u00E9 kovem a podpo\u0159en\u00E9 elektrick\u00FDm polem (FE-MISPC). Tento zp\u016Fsob je charakteristick\u00FD t\u00EDm, \u017Ee se na vrstvu amorfn\u00EDho k\u0159em\u00EDku p\u0159ilo\u017E\u00ED nejm\u00E9n\u011B jeden zahrocen\u00FD kontakt z elektricky vodiv\u00E9ho materi\u00E1lu, na\u010De\u017E se indukuje pr\u016Fchod elektrick\u00E9ho proudu mezi t\u00EDmto kontaktem a kovovou podlo\u017Ekou. P\u0159itom se reguluje \u00FArove\u0148 proch\u00E1zej\u00EDc\u00EDho proudu a d\u00E1vkov\u00E1n\u00ED elektrick\u00E9 energie do vzorku. Takto lze dos\u00E1hnout k\u0159em\u00EDkov\u00FDch krystal\u016F i men\u0161\u00EDch ne\u017E 100 nm, a to i p\u0159i b\u011B\u017En\u00E9 pokojov\u00E9 teplot\u011B."@cs . . "4"^^ . . . . "4"^^ . "Zp\u016Fsob v\u00FDroby izolovan\u00FDch skupin mikroskopick\u00FDch k\u0159em\u00EDkov\u00FDch krystal\u016F"@cs . . . "RIV/68378271:_____/10:00354185" . "2010-05-24+02:00"^^ . "RIV/68378271:_____/10:00354185!RIV13-AV0-68378271" . . . . "300549" . "Prague" . . "P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)" . "Stuchl\u00EDk, Ji\u0159\u00ED" . . "Zp\u016Fsob v\u00FDroby izolovan\u00FDch skupin mikroskopick\u00FDch k\u0159em\u00EDkov\u00FDch krystal\u016F v tenk\u00E9 vrstv\u011B amorfn\u00EDho k\u0159em\u00EDku nanesen\u00E9 na kovov\u00E9 podlo\u017Ece prob\u00EDh\u00E1 za pomoci procesu krystalizace z pevn\u00E9 f\u00E1ze indukovan\u00E9 kovem a podpo\u0159en\u00E9 elektrick\u00FDm polem (FE-MISPC). Tento zp\u016Fsob je charakteristick\u00FD t\u00EDm, \u017Ee se na vrstvu amorfn\u00EDho k\u0159em\u00EDku p\u0159ilo\u017E\u00ED nejm\u00E9n\u011B jeden zahrocen\u00FD kontakt z elektricky vodiv\u00E9ho materi\u00E1lu, na\u010De\u017E se indukuje pr\u016Fchod elektrick\u00E9ho proudu mezi t\u00EDmto kontaktem a kovovou podlo\u017Ekou. P\u0159itom se reguluje \u00FArove\u0148 proch\u00E1zej\u00EDc\u00EDho proudu a d\u00E1vkov\u00E1n\u00ED elektrick\u00E9 energie do vzorku. Takto lze dos\u00E1hnout k\u0159em\u00EDkov\u00FDch krystal\u016F i men\u0161\u00EDch ne\u017E 100 nm, a to i p\u0159i b\u011B\u017En\u00E9 pokojov\u00E9 teplot\u011B." . . . "Method of making isolated groups of microscopic silicon crystals"@en . "\u00DA\u0159ad pr\u016Fmyslov\u00E9ho vlastnictv\u00ED" . . "Fabrication of isolated groups of microscopic silicon crystals in a thin film of amorphous silicon deposited on a metal substrates is done by employing field-enhanced metal-induced solid-phase crystallization process. This process is specific by the procedure that at least one tip-like contact from electrically conductive material is positioned on the amorphous silicon thin film and a flow of electrical current between the contact and metal substrates is induced thereafter. The current amplitude and energy dose to the sample is controlled. In this way one can fabricate silicon crystals smaller than 100 nm, even at room temperature. Growth of the crystals is accompanied by a formation of microscopic pits in the thin film."@en . . "Zp\u016Fsob v\u00FDroby izolovan\u00FDch skupin mikroskopick\u00FDch k\u0159em\u00EDkov\u00FDch krystal\u016F"@cs . "Fyzik\u00E1ln\u00ED \u00FAstav AV \u010CR, v. v. i., Praha 8,CZ" . . .