"P(GA202/07/0601), P(GPP204/10/P028), Z(AV0Z10100521)" . . . "Braun, W." . "GaSb; surface reconstruction; DFT; entropy"@en . "000281845900006" . "1"^^ . . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "289606" . . . . "82" . "RIV/68378271:_____/10:00353804!RIV11-GA0-68378271" . . . . "[B2D981F68633]" . "Surface unit cells with a larger area and a reduced symmetry have a larger configurational entropy. The entropy may even stabilize reconstructions with higher energy at finite temperatures. We study the entropy contribution to surface reconstructions on the basis of ground-state calculations employing density-functional theory. Specifically, the ground-state GaSb(111)A surface reconstruction has a (22) symmetry, but at elevated temperatures, we experimentally observe the (2323)-R30\u00B0 symmetry in agreement with the theoretical results. The findings based on the general expressions are consistent with experimental data from other semiconductor surfaces."@en . . "Stabilization of semiconductor surface reconstructions by configurational entropy"@en . "Romanyuk, Olexandr" . . "Stabilization of semiconductor surface reconstructions by configurational entropy" . "Riechert, H." . "RIV/68378271:_____/10:00353804" . . . "Stabilization of semiconductor surface reconstructions by configurational entropy" . "12" . "5"^^ . . . "Stabilization of semiconductor surface reconstructions by configurational entropy"@en . "Romanyuk, Olexandr" . "1098-0121" . "Physical Review. B" . "Grosse, F." . "Proessdorf, A." . "5"^^ . "Surface unit cells with a larger area and a reduced symmetry have a larger configurational entropy. The entropy may even stabilize reconstructions with higher energy at finite temperatures. We study the entropy contribution to surface reconstructions on the basis of ground-state calculations employing density-functional theory. Specifically, the ground-state GaSb(111)A surface reconstruction has a (22) symmetry, but at elevated temperatures, we experimentally observe the (2323)-R30\u00B0 symmetry in agreement with the theoretical results. The findings based on the general expressions are consistent with experimental data from other semiconductor surfaces." . .