"3"^^ . "000278592400014" . "Luminescence and scintillation kinetics of the Pr3+ doped Lu2Si2O7 single crystal" . . "RIV/68378271:_____/10:00353440!RIV11-MSM-68378271" . . "Luminescence and scintillation kinetics of the Pr3+ doped Lu2Si2O7 single crystal"@en . "269032" . "1-3" . "Ren, G." . . "NL - Nizozemsko" . . "6"^^ . "P(ME10084), Z(AV0Z10100521)" . . "RIV/68378271:_____/10:00353440" . . "[38C80E3C11B5]" . "0009-2614" . . "493" . "Mih\u00F3kov\u00E1, Eva" . . "Nikl, Martin" . . "Chemical Physics Letters" . . . "Luminescence and scintillation kinetics of the Pr3+ doped Lu2Si2O7 single crystal" . "Ding, D." . . . . "5"^^ . . "Single crystal of the Pr3+ doped Lu2Si2O7 was grown to test its luminescence and scintillation characteristics. Absorption, excitation and photoluminescence (PL) spectra manifest the 4fM5d transitions in the UV spectral region. Evaluation of temperature dependences of both the Pr3+ PL decay times and intensities of the delayed radiative recombination enable to determine the ionization barrier of the 5d1 relaxed excited state of Pr3+, being about 0.7\u20130.75 eV" . . "Feng, H." . . . . . "Luminescence and scintillation kinetics of the Pr3+ doped Lu2Si2O7 single crystal"@en . "Single crystal of the Pr3+ doped Lu2Si2O7 was grown to test its luminescence and scintillation characteristics. Absorption, excitation and photoluminescence (PL) spectra manifest the 4fM5d transitions in the UV spectral region. Evaluation of temperature dependences of both the Pr3+ PL decay times and intensities of the delayed radiative recombination enable to determine the ionization barrier of the 5d1 relaxed excited state of Pr3+, being about 0.7\u20130.75 eV"@en . "Lu2Si2O7; Pr-doped; luminescence; scintillator; excited state ionization"@en . "Jar\u00FD, V\u00EDt\u011Bzslav" . .