"RIV/68378271:_____/10:00343352!RIV11-AV0-68378271" . . . "[D4EB76A4926B]" . "256041" . "4"^^ . "Physica Status Solidi. A" . . "Effect of local doping on the electronic properties of epitaxial graphene on SiC"@en . . . "RIV/68378271:_____/10:00343352" . "DE - Spolkov\u00E1 republika N\u011Bmecko" . "Effect of local doping on the electronic properties of epitaxial graphene on SiC" . . . "Z(AV0Z10100521)" . "000276339800021" . "3" . "Effect of local doping on the electronic properties of epitaxial graphene on SiC"@en . "Flipse, K." . "1"^^ . "Effect of local doping on the electronic properties of epitaxial graphene on SiC" . "207" . . "Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed." . . "3"^^ . "van der Ruit, K." . "graphene; silicon carbide; scanning tunneling microscopy; electronic structure"@en . . "1862-6300" . . . "\u010Cervenka, Ji\u0159\u00ED" . . "Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed."@en . . . .