"Martin, M." . "Journal of Physics D-Applied Physics" . "P(GP202/09/P099), P(IAA100100902), Z(AV0Z10100520)" . "8"^^ . "Mounaix, P." . "High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As"@en . "317105" . . "19" . "Optical pump\u2014terahertz probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 10^9 to 10^12 cm^-2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase of the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2V\u20131s\u20131. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap heavy-ion irradiated IIn0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology." . . . "42" . . "[93A5740FFFD8]" . "0022-3727" . "RIV/68378271:_____/09:00330267!RIV10-AV0-68378271" . . . . "Fekete, Ladislav" . "High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As"@en . "Ku\u017Eel, Petr" . . . "Mangeney, J." . "High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As" . "6"^^ . . "RIV/68378271:_____/09:00330267" . . . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "Delagnes, J. C." . . . . "Optical pump\u2014terahertz probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 10^9 to 10^12 cm^-2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase of the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2V\u20131s\u20131. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap heavy-ion irradiated IIn0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology."@en . . . . "4"^^ . "InGaAs; photocarrier mobility; ultrafast photoconductivity terahertz; ion irradiation; terahertz; ion irradiation"@en . "Kadlec, Filip" . . "000269993100029" . . "N\u011Bmec, Hynek" . . . "High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As" . .