. . . . . "0021-8979" . . "Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition." . . "RIV/68378271:_____/09:00328675!RIV10-AV0-68378271" . "RIV/68378271:_____/09:00328675" . "nitrides; silicon carbide; deep levels; DLTS"@en . . "8"^^ . "V\u00FDborn\u00FD, Zden\u011Bk" . "Leys, M. R." . . "Kri\u0161tofik, Jozef" . . . "Boeykens, S." . "5"^^ . "000266263300075" . "[9149ABFF4890]" . "309235" . . "P(GA202/07/0525), Z(AV0Z10100521)" . "Journal of Applied Physics" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "7"^^ . "Deep defects in GaN/AlGaN/SiC hererostructures"@en . "Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition."@en . "Hub\u00EDk, Pavel" . "9" . "Kindl, Dobroslav" . . . "Deep defects in GaN/AlGaN/SiC hererostructures" . "Deep defects in GaN/AlGaN/SiC hererostructures" . . "Deep defects in GaN/AlGaN/SiC hererostructures"@en . . . . . . . . "105" . "Mare\u0161, Ji\u0159\u00ED J." .