"[C5573F8C732E]" . "Characterization of boron doped diamond epilayers grown in a NIRIM type reactor" . . "D\u00B4Olieslaeger, M." . "Haenen, K." . . . "CVD diamond; homoepitaxy; P-type doping; electrical properties; optical properties"@en . . . . "Teraji, T." . "Characterization of boron doped diamond epilayers grown in a NIRIM type reactor" . . "Lazea, A." . "Characterization of boron doped diamond epilayers grown in a NIRIM type reactor"@en . "Z(AV0Z10100520)" . "359575" . "Vrstvy diamantu dopovan\u00E9ho borem v \u0161irok\u00E9m oboru koncenterac\u00ED byly vyp\u011Bstov\u00E1ny na (100) monokrystalick\u00FDch substr\u00E1tech. Charakterizov\u00E1ny byly pomoc\u00ED optick\u00FDch a elektrick\u00FDch metod. Z\u00EDsk\u00E1ny vrstvy s Hallovou pohyblivost\u00ED bl\u00EDzkou pohyblivosti d\u011Br v p\u0159\u00EDrodn\u00EDm diamantu. Morfologie vrstev byla sledov\u00E1na pomoc\u00ED skenovac\u00ED elektronov\u00E9 mikroskopie, jejich \u010Distota zkoum\u00E1na pomoc\u00ED katodoluminiscence. Fotovodivostn\u00ED spektroskopie (FTPS) odhalila vliv koncentrace boru na po\u010D\u00E1tek fotoionizace a na excitovan\u00E9 stavy."@cs . "Vorl\u00ED\u010Dek, Vladim\u00EDr" . . "Diamond and Related Materials" . "7" . . . . . "CH - \u0160v\u00FDcarsk\u00E1 konfederace" . . "RIV/68378271:_____/08:00320729!RIV09-AV0-68378271" . . "1"^^ . . "Characterization of boron doped diamond epilayers grown in a NIRIM type reactor"@en . "000259598300059" . "RIV/68378271:_____/08:00320729" . "Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases."@en . "D\u00B4Haen, J." . "Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases." . "0925-9635" . "8"^^ . . . "5"^^ . "17" . "Daenen, M." . "Charakterizace epitaxn\u00EDch vrstev diamantu dotovan\u00E9ho borem vyp\u011Bstovan\u00FDch v reaktoru typu NIRIM"@cs . "Mortet, V." . "Charakterizace epitaxn\u00EDch vrstev diamantu dotovan\u00E9ho borem vyp\u011Bstovan\u00FDch v reaktoru typu NIRIM"@cs .