"Stuchl\u00EDkov\u00E1, The-Ha" . . . "Vlastnosti tenk\u00FDch k\u0159em\u00EDkov\u00FDch vrstev p\u0159ipraven\u00FDch vysokou rychlost\u00ED r\u016Fstu v \u0161irok\u00E9m rozsahu tlou\u0161t\u011Bk"@cs . . . "Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses"@en . . "6"^^ . . "4"^^ . . "RIV/68378271:_____/08:00320320!RIV09-AV0-68378271" . "P\u0159\u00EDprava tenk\u00FDch k\u0159em\u00EDkov\u00FDch vrstev za vysok\u00E9 rychlosti r\u016Fstu je d\u016Fle\u017Eit\u00FDm c\u00EDlem pro pou\u017Eit\u00ED ve slune\u010Dn\u00EDch \u010Dl\u00E1nc\u00EDch. Jsou pops\u00E1ny vlastnosti hydrogenovan\u00E9ho mikrokrystalick\u00E9ho k\u0159em\u00EDku p\u0159ipraven\u00E9ho pomoc\u00ED PECVD s mnohon\u00E1sobnou dutinovou katodou p\u0159i vysok\u00E9m tlaku v re\u017Eimu ochuzen\u00E9 sm\u011Bsi v rozsahu tlou\u0161t\u011Bk od 0,4 \u03BCm a\u017E do 30 \u03BCm bez probl\u00E9m\u016F s loup\u00E1n\u00EDm vrstev."@cs . . . . "Vlastnosti tenk\u00FDch k\u0159em\u00EDkov\u00FDch vrstev p\u0159ipraven\u00FDch vysokou rychlost\u00ED r\u016Fstu v \u0161irok\u00E9m rozsahu tlou\u0161t\u011Bk"@cs . . . . "Ko\u010Dka, Jan" . "6"^^ . . . "19-25" . . . "Journal of Non-Crystalline Solids" . "P(GD202/05/H003), P(IAA1010316), P(IAA1010413), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)" . "Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses" . . "354" . "000256500400084" . "NL - Nizozemsko" . . "Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses"@en . "390517" . "Ledinsk\u00FD, Martin" . "Mates, Tom\u00E1\u0161" . "RIV/68378271:_____/08:00320320" . "Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses" . "0022-3093" . . "Stuchl\u00EDk, Ji\u0159\u00ED" . . "Preparation of thin film silicon at high growth rate is an important target for its application in solar cells. The properties of hydrogenated microcrystalline silicon, prepared with the help of PECVD multi-hole cathode in a high pressure and depletion regime in a wide range of thicknesses are described in detail. We illustrate the surprising result that we can prepare high growth rate microcrystalline silicon from 0.4 up to 30 \u03BCm thickness without great peel-off problems. The room temperature dark DC conductivity, as well as the crystallinity, increased up to 5 \u03BCm film thickness and then started to decrease again. These results are explained by the initial temperature profiling and a thickness-induced increase of the lateral inhomogeneity." . "[1D6D89B9E6A2]" . . . . "Fejfar, Anton\u00EDn" . "Preparation of thin film silicon at high growth rate is an important target for its application in solar cells. The properties of hydrogenated microcrystalline silicon, prepared with the help of PECVD multi-hole cathode in a high pressure and depletion regime in a wide range of thicknesses are described in detail. We illustrate the surprising result that we can prepare high growth rate microcrystalline silicon from 0.4 up to 30 \u03BCm thickness without great peel-off problems. The room temperature dark DC conductivity, as well as the crystallinity, increased up to 5 \u03BCm film thickness and then started to decrease again. These results are explained by the initial temperature profiling and a thickness-induced increase of the lateral inhomogeneity."@en . . "conductivity; plasma deposition"@en . .