. . "atomic force microscopy; nanostructures; low-pressure metalorganic vapor phase epitaxy; semiconducting III\u2013V materials"@en . "000262019400090" . "372053" . . "4"^^ . . "Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots"@en . "Vysko\u010Dil, Jan" . . . "310" . "P(GA202/06/0718), P(IAA100100719), Z(AV0Z10100521)" . "RIV/68378271:_____/08:00318588" . . "Hulicius, Eduard" . . . . . "Oswald, Ji\u0159\u00ED" . "Journal of Crystal Growth" . "Vliv kryc\u00ED vrstvy na vlastnosti InAs/GaAs kvantov\u00FDch te\u010Dek p\u0159ipraven\u00FDch technologi\u00ED MOVPE"@cs . "0022-0248" . . "NL - Nizozemsko" . . . "Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots"@en . "\u0160ime\u010Dek, Tomislav" . "Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots" . "8"^^ . . "Melichar, Karel" . "8"^^ . . . "RIV/68378271:_____/08:00318588!RIV09-AV0-68378271" . "[47268277396D]" . . . "Hospodkov\u00E1, Alice" . "Pangr\u00E1c, Ji\u0159\u00ED" . "23" . "We have studied the effect of GaAs capping layer growth rate on the quantum dot (QD) properties. It was found that higher growth rate of capping layer decreases the dissolution of In atoms from QDs." . "Vliv kryc\u00ED vrstvy na vlastnosti InAs/GaAs kvantov\u00FDch te\u010Dek p\u0159ipraven\u00FDch technologi\u00ED MOVPE"@cs . . . "Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots" . . "We have studied the effect of GaAs capping layer growth rate on the quantum dot (QD) properties. It was found that higher growth rate of capping layer decreases the dissolution of In atoms from QDs."@en . "Studovali jsme efekt rychlosti r\u016Fstu GaAs kryc\u00ED vrstvy na vlastnosti kvantov\u00FDch te\u010Dek (QD). Vy\u0161\u0161\u00ED rychlost r\u016Fstu sni\u017Euje rozpou\u0161t\u011Bn\u00ED In atom\u016F z QD ."@cs . . . "Kuldov\u00E1, Karla" . . .